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自偏置低噪聲放(fang)大(da)器(qi)主要針對目前自偏置放(fang)大(da)器(qi)的噪音和增益頻帶(dai)寬度無法滿足各(ge)種(zhong)的問(wen)題。主要包括兩級(ji)功率(lv)(lv)放(fang)大(da)電(dian)(dian)路，第一級(ji)功率(lv)(lv)放(fang)大(da)電(dian)(dian)路由功率(lv)(lv)電(dian)(dian)感L2組成、NMOS管(guan)M1、PMOS管(guan)M2、負反饋(kui)電(dian)(dian)阻值R1與負載電(dian)(dian)源電(dian)(dian)路Z1相接(jie)；第(di)一級功(gong)率放大(da)電(dian)(dian)(dian)(dian)(dian)路(lu)的輸出(chu)(chu)端連接(jie)第(di)二(er)級功(gong)率放大(da)電(dian)(dian)(dian)(dian)(dian)路(lu)，第(di)二(er)級功(gong)率放大(da)電(dian)(dian)(dian)(dian)(dian)路(lu)由(you)共(gong)源NMOS管M3和(he)匹配電(dian)(dian)(dian)(dian)(dian)阻(zu)(zu)R2組成。該(gai)M1管、M2管和(he)M3管用作提供電(dian)(dian)(dian)(dian)(dian)壓增(zeng)益(yi)，負反(fan)饋電(dian)(dian)(dian)(dian)(dian)阻(zu)(zu)值R1和(he)功(gong)率電(dian)(dian)(dian)(dian)(dian)感L2用作輸入特(te)性(xing)阻(zu)(zu)抗(kang)，負載電(dian)(dian)(dian)(dian)(dian)源電(dian)(dian)(dian)(dian)(dian)路(lu)Z1拓展增(zeng)益(yi)頻(pin)帶寬度，匹配電(dian)(dian)(dian)(dian)(dian)阻(zu)(zu)R2用作輸出(chu)(chu)特(te)性(xing)阻(zu)(zu)抗(kang)。

CHA3666-99F是款兩級自偏(pian)置(zhi)寬帶(dai)單芯片低噪聲放大器。

CHA3666-99F采用(yong)標準PHEMT工藝技術：25um柵(zha)極長度、穿(chuan)過襯底的(de)通孔(kong)、空氣橋和電子束(shu)柵(zha)極光刻技術。

常見結構特征

寬帶性能：6-17GHZ

1.8db噪聲系數

26dbm三階截距點

1db壓縮時(shi)的17dbm功(gong)率

21db增益值

低直流電(dian)壓電(dian)輸出功(gong)率

直流電(dian)偏(pian)置電(dian)壓：Vd=4.0伏@ld=80MA

封裝尺寸1.47x1.47x0.1mm