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芯片衰減器

關鍵性基本參數

電源芯(xin)片衰減器(qi)(qi),上(shang)限(xian)250瓦，上(shang)限(xian)18 GHz，標準(zhun)規范衰減器(qi)(qi)在所有體(ti)溫下平等地減少RF最大功率，而體(ti)溫可變性電子(zi)(zi)器(qi)(qi)件(jian)來設計為(wei)在炎熱(re)下壓(ya)縮其衰減，以提供了(le)網絡信號調平廣(guang)泛使用(yong)需(xu)要備考的最合(he)適的反應。顆粒(li)狀衰減器(qi)(qi)適用(yong)于變成器(qi)(qi)電路(lu)板，讀取(qu)器(qi)(qi)，上(shang)/下更換器(qi)(qi)，相(xiang)位符(fu)合(he)陣(zhen)列和按鈕開關廣(guang)泛使用(yong)。按照其需(xu)要備考的規格，能能在帶異薄或厚阻值(zhi)的BeO，氮化鋁或硫化鋁瓷(ci)質上(shang)研制電子(zi)(zi)器(qi)(qi)件(jian)。

品牌：MACOM

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集成電路芯片衰減器

Model	Power (Watts)	Frequency (GHz)	Ceramic Substrate	Resistor Film	Wrap Options	Finish Option	Width (Inches)	Length (Inches)	Height (Inches)
1KNA250	250	1	AlN	Thin & Thick	G, Tabbed	N, T, H	0.375	0.375	0.040
	100	2.3	AlN	Thin & Thick	G, Tabbed	N, T, H	0.350	0.225	0.040
	150	1.9	AlN	Thin & Thick	G, Tabbed	N, T, H	0.375	0.250	0.040
2KNA250	250	2.3	AlN	Thin & Thick	G, Tabbed	N, T, H	0.500	0.500	0.040
3KNA100	100	3	AlN	Thin	G, Tabbed	N, T, H	0.375	0.250	0.040
	10	4	BeO	Thin	G	N, T, H	0.100	0.200	0.040
	100	0.5	BeO	Thin	G	N, T, H	0.500	0.500	0.40
	20	4	BeO	Thin	G	N, T, H	0.250	0.250	0.040
	50	1	BeO	Thin	G	N, T, H	0.375	0.375	0.040
	1.5	12.4	Alumina	Thin		N, T, H, G	0.125	0.150	0.010
	0.75	18	Alumina	Thin		N, T, H, G	0.060	0.075	0.010
	0.75	8	Alumina	Thin	F	N, T, H, G	0.060	0.075	0.010
	0.75	18	Alumina	Thin	Tabbed	G, T, H	0.060	0.075	0.040
	0.75	18	Alumina	Thin	W	N, T, H, G	0.060	0.075	0.010
	1.5	4	Alumina	Thin	F	N, T, H, G	0.125	0.150	0.010
	1.5	12.4	Alumina	Thin	Tabbed	G, T, H	0.125	0.150	0.040
	1.5	12.4	Alumina	Thin	W	N, T, H, G	0.125	0.150	0.010
	100	0.4	BeO	Thin	G	N, T, H	0.500	0.500	0.040